| Overview |
SIR7000FIB
is designed to repair photomask defects targeting the 65nm
semiconductor device node. This system can repair extremely
small and complicatedly shaped defects on photomasks, such
as phase shift masks and binary masks, with high accuracy. |
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| Features |
1. 10-nm or less (3σ) repair accuracy
The new system features improved repair accuracy, from the
conventional 15 nm (3σ) to 10 nm (3σ). A new ion
beam optical system improves ion beam radiation position stability
and sharpens the beam focus, thereby enabling detailed observation
of microscopic defect shapes. As a result, the system is capable
of identifying and repairing defect shapes with higher fidelity.
In addition, with a temperature control system mounted in
the chamber unit to reduce temperature variance, the new system
exhibits a reduction in temperature dependent drift.
2. CAD linkage function
By identifying the normal pattern of a defect area from the
graphic data of EB used in semiconductor layout design and
superimposing the pattern on the defect area, the system enables
repair based on a shape designed as close as possible to the
normal pattern. The system also enables repair of complex
shapes such as OPC shapes with higher fidelity.
3. SMIF transport mechanism
The new model utilizes a photomask SMIF transport mechanism.
The system can load a photomask carried by an SMIF pod into
the chamber via a super clean load mechanism, preventing the
adherence of particles (microscopic contaminants) to the photomask.
electron images. |
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